XN1216 - Silicon NPN epitaxial planer transistor
Composite Transistors XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1216 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolu
XN1216 Features
* 1 Composite Transistors PT
* Ta 500 XN1216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 160 VCE(sat)
* IC 100 hFE
* IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA Collector to emitter saturation vo
