XN1217 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer transistor Specs

XN1217 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 500 XN1217 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 120 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE.
IC 400 VCE=10V 100 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 350 300 250 200 Ta=75˚C 150 100 50 0 25˚C.

Datasheet Details

Part number	XN1217
Manufacturer	Panasonic Semiconductor
File Size	33.32 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1217 Datasheet
Additional preview pages of the XN1217 datasheet.

📁 Similar Datasheet

XN1202 - High Performance Current Mode PWM Switching Power Supply Controller (ETC)

XN1202 - High Performance Current Mode PWM Switching Power Supply Controller (Innuovo)

XN1203 - High Performance Current Mode PWM Switching Power Supply Controller (Innuovo)

XN1042 - Current Mode PWM Controller (ETC)

XN1042 - Switching power supply controller IC (Innuovo)

XN1043 - Switching power supply controller IC (Innuovo)

XN1049 - Switch Power Supply PWM Controller (Innuovo)

XN1059 - Switching power supply controller IC (Innuovo)

XN1358 - Switching power converter ICs (Innuovo)

XN1368 - Switching power converter IC (Innuovo)

Full PDF Text Transcription

Click to expand full text

Composite Transistors XN1217 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1217 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |