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XN1210 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

  • 1 Composite Transistors PT.
  • Ta 500 XN1210 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE 60 VCE(sat).
  • IC 100 hFE.
  • IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1.
  • 25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0.
  • 25˚C Collector curre.

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Datasheet Details

Part number XN1210
Manufacturer Panasonic Semiconductor
File Size 33.32 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN1210 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 +0.2 s Basic Part Number of Element q 0.8 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 UN1210 × 2 elements 0.1 to 0.
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