XN1210 - Silicon NPN epitaxial planer transistor

Panasonic

Key Features

1 Composite Transistors PT.
Ta 500 XN1210 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 60 VCE(sat).
IC 100 hFE.
IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1.
25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0.
25˚C Collector curre.

XN1210 silicon npn epitaxial planer transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	XN1210
Manufacturer	Panasonic
File Size	33.32 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1210 Datasheet

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Other Datasheets by Panasonic

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XN1211	Silicon NPN epitaxial planer transistor
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XN1215	Silicon NPN epitaxial planer transistor

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Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 +0.2 s Basic Part Number of Element q 0.8 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 UN1210 × 2 elements 0.1 to 0.