XN1210
Features
1 posite Transistors
- Ta
Total power dissipation PT (m W)
0 0 40 80 120 160
Ambient temperature Ta (˚C)
- VCE
VCE(sat)
- IC
100 h FE
- IC
IC/IB=10 400 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1
- 25˚C
Forward current transfer ratio h FE
IB=1.0m A 0.9m A 0.8m A
Ta=25˚C
350 300 Ta=75˚C 250 25˚C 200 150 100 50 0
- 25˚C
Collector current IC (m A)
40 0.4m A 0.5m A 0.6m A 0.7m A 0.1m A
0.3m A
0 0 2 4 6 8 10...
