XN1215
Features
1 posite Transistors
- Ta
Total power dissipation PT (m W)
0 0 40 80 120 160
Ambient temperature Ta (˚C)
- VCE
160 100
VCE(sat)
- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 h FE
- IC
400 VCE=10V
30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C
Forward current transfer ratio h FE
IB=1.0m A 0.9m A 0.8m A
Ta=25˚C
350 300 250 200 25˚C 150 100 50 0
- 25˚C Ta=75˚C
Collector current IC (m A)
120 100 80
0.7m A 0.6m A 0.5m A 0.4m A 0.3m A
60 0.2m A 40 20 0 0 2 4 6 8 10 12 0.1m A
Ta=75˚C
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