XN1214 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer transistor Specs

XN1214 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 500 XN1214 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 160 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE.
IC VCE=10V 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C IB=1.0mA Collector current IC (mA) 120 100 80 60 40 20 0 0 2 4 6 8 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE.

Datasheet Details

Part number	XN1214
Manufacturer	Panasonic Semiconductor
File Size	33.66 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1214 Datasheet
Additional preview pages of the XN1214 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1214 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1213 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |