XN1211 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer transistor Specs

XN1211 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 500 XN1211 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 160 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE.
IC VCE=10V 30 10 3 1 0.3 0.1.
25˚C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Collector current IC (mA) 300 Ta=75˚C.

Datasheet Details

Part number	XN1211
Manufacturer	Panasonic Semiconductor
File Size	33.85 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1211 Datasheet
Additional preview pages of the XN1211 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1211 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |