XN1211
Features
1 posite Transistors
- Ta
Total power dissipation PT (m W)
0 0 40 80 120 160
Ambient temperature Ta (˚C)
- VCE
160 100
VCE(sat)
- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 400 h FE
- IC
VCE=10V
30 10 3 1 0.3 0.1
- 25˚C 0.03 0.01 0.1
120 100 80 60
0.7m A 0.6m A 0.5m A 0.4m A 0.3m A
Forward current transfer ratio h FE
IB=1.0m A 0.9m A 0.8m A
Collector current IC (m A)
300 Ta=75˚C
200 25˚C 100
- 25˚C
0.2m A 40 20 0 0 2 4 6 8 10 12
25˚C
Ta=75˚C
0.1m A
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (m A)
Collector current IC (m...
