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XN121F Silicon NPN epitaxial planer transistor

XN121F Description

Composite Transistors XN121F Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.

XN121F Features

* 1 Composite Transistors PT
* Ta 500 XN121F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 240 100 VCE(sat)
* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE
* IC VCE=

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Datasheet Details

Part number
XN121F
Manufacturer
Panasonic Semiconductor
File Size
33.86 KB
Datasheet
XN121F_PanasonicSemiconductor.pdf
Description
Silicon NPN epitaxial planer transistor

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Silicon NPN epitaxial planer transistor Panasonic Semiconductor
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