* 1 Composite Transistors XN1601 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC =
* 10µA, IE = 0 IC =
* 2mA, IB = 0 IE =
* 10µA, IC = 0 VCB =
* 20V, IE = 0 VCE =
* 10V, IB = 0 VCE =
* 10V, IC =
* 2mA IC =
* 100mA,
XN1601
Panasonic Semiconductor
60.38 KB
Silicon pnp(npn) epitaxial planer transistor.
Composite Transistors
XN1601
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
For general amplif.
📁 Related Datasheet
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XN1110 - Silicon PNP epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN1110
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.0.
XN1111 - Silicon PNP epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN1111
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.0.
XN1112 - Silicon PNP epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN1112
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.0.
