XN4556 Datasheet (Panasonic Semiconductor) - NPN epitaxial planer transistor

XN4556, NPN epitaxial planer transistor

Composite Transistors XN4556 NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 0.65±0.15 6 0.95 2.8 0.3 +0.2 +0.25 1.5 0.05 0.65±0.15 1 0.3 0.05 2.9 0.05 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1149 × 2 elements 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to

XN4556 Features

* 0.5

* 0.05 +0.1 +0.1 1 Composite Transistors PT

* Ta 500 80 Ta=25˚C XN4556 IC

* VCE 60 VCE=10V 50 25˚C IC

* VBE Total power dissipation PT (mW) Collector current IC (mA) 60 300 IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA Collector current IC (mA) 400 40 Ta=7