XN5553 Datasheet - Panasonic Semiconductor

XN5553 Silicon NPN epitaxial planer transistor

Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 0.65±0.15 2.8 0.3 +0.2 +0.25 1.5 0.05 6 0.65±0.15 1 0.3 0.05 0.5 0.05 0.95 2.9 0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1149 × 2 elements 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector .

XN5553 Features

* +0.1 +0.1 1 Composite Transistors PT

* Ta 500 80 Ta=25˚C XN5553 IC

* VCE 60 VCE=10V 50 25˚C IC

* VBE Total power dissipation PT (mW) Collector current IC (mA) 60 300 IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA Collector current IC (mA) 400 40 Ta=75˚C

* 25˚C

XN5553_PanasonicSemiconductor.pdf