* +0.1 +0.1 1 Composite Transistors XN5601 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC =
* 10µA, IE = 0 IC =
* 2mA, IB = 0 IE =
* 10µA, IC = 0 VCB =
* 20V, IE = 0 VCE =
* 10V, IB = 0 VCE =
* 10V, IC =
* 2mA IC =
XN5601
Panasonic Semiconductor
60.80 KB
Silicon pnp epitaxial planer transistor.
Composite Transistors
XN5601
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
For general amplif.
📁 Related Datasheet
XN5501 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
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Composite Transistors
XN05501 (XN5501)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification ■ Features
• Two el.
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XN05501 (XN5501)
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Unit: mm
For general amplification ■ Features
• Two el.
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2.90+0..
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XN05531 (XN5531)
Silicon NPN epitaxial planer transistor
For high frequency oscillation and mixing
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Composite Transistors
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Unit: mm
For amplification of the low frequency
0.65±0.15
2.8 –0.3
+0.2 +0.25.
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Unit: mm
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XN01112 (XN1112)
Silicon PNP epitaxial planar type
Unit: mm
For switching/digital circuits ■ Features
• T.
XN01114 - Silicon PNP epitaxial planer transistor
(Panasonic Semiconductor)
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XN1114
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15.
