2SK3559 - N-channel MOSFET
Silicon MOSFET 2SK3559 N-channel enhancement mode MOSFET High speed switching Absolute Maximum Ratings Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Allowable power Tc = 25 °C 1 dissipation Ta = 25 °C 2 Junction temperature Storage temperature Symbol VDSS VGSS ID IDP PD PD Tj Tstg Rating 230 30 30 120 100 3 150 -55 to +150 1 : Tc = 25 °C 2 : Ta = 25 °C (Without heat sink ) Unit V V A A W W °C °C 16.2±0.5 (3.2) (2.3) Solder
