2SK3374 Datasheet - Panasonic

2SK3374 N-Channel MOSFET

2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) 2SK3374 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) High forward transfer admittance: ïYfsï = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Dr.

2SK3374_Panasonic.pdf