Part number:
2SK3371
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
211.29 KB
Description:
N-channel mosfet.
* Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta =
2SK3371
Toshiba ↗ Semiconductor
211.29 KB
N-channel mosfet.
📁 Related Datasheet
2SK3372 - Silicon N-Channel Junction FET
(Panasonic)
Silicon Junction FETs (Small Signal)
2SK3372
Silicon N-Channel Junction
Unit: mm
For impedance conversion in low frequency For electret capacitor mi.
2SK3373 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3373
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3373
Switching Regulator and DC-DC Converter Applications Motor Drive .
2SK3374 - N-Channel MOSFET
(Panasonic)
2SK3374
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
2SK3374
Switching Regulator Applications
· · · · Low drain-source ON resi.
2SK3376MFV - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3376MFV
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376MFV
For ECM
• Application for Ultra-pact ECM
0.22±0.05 1.2±0.05 .
2SK3376TK - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3376TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376TK
For ECM
• Application for Ultra-pact ECM
0.22±0.05 1.2±0.05 0..
2SK3377 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3377 2SK3377-Z P.
2SK3378 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3378
Silicon N Channel MOS FET High Speed Switching
ADE-208-805 (Z) 1st.Edition. June 1999 Features
• Low on-resistance R DS =2.7 Ω typ. (V GS = 1.
2SK330 - N-Channel MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK330
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap.