2SK3376MFV Datasheet - Toshiba Semiconductor

2SK3376MFV N-Channel MOSFET

2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 3 2 0.13±0.05 0.8±0.05 Unit: mm Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD (Note 1) Tj Tstg Rating -20 10 150 125 55~125 Unit 1.2±0.05 0.8±0.05 V mA mW °C °C 0.4 1 www.DataSheet.

2SK3376MFV_ToshibaSemiconductor.pdf