2SK3304
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.
ORDERING INFORMATION
PART NUMBER 2SK3304 PACKAGE TO-3P
FEATURES
- Low gate charge : QG = 44 n C TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A)
- Gate voltage rating : ±30 V
- Low on-state resistance : RDS(on) = 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A)
- Avalanche capability ratings (TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg
Note2 Note2
900 ±30 ±7 ±21 130 3.0
- 55 to + 150 7 147
V V A A W W °C A m J
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Storage Temperature Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The...
