Datasheet4U Logo Datasheet4U.com

2SK3307 - SWITCHING N-CHANNEL POWER MOSFET

General Description

designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A).
  • Low Ciss: Ciss = 4650 pF TYP.
  • Built-in gate protection diode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3307 N-Channel MOSFET Transistor Inchange Semiconductor
2SK330 N-Channel MOSFET Toshiba Semiconductor
2SK3301 N-Channel MOSFET Toshiba Semiconductor
2SK3302 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK3305 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3304 N-Channel MOSFET
2SK3305 N-Channel MOSFET
2SK3306 N-Channel MOSFET
2SK3322 SWITCHING N-CHANNEL POWER MOSFET
2SK3324 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 4650 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3307 TO-3P (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Drain Current (DC) Drain Current (pulse) Note1 ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT1 120 W Total Power Dissipation (TA = 25°C) PT2 3.