NEC 2SK3307
The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | 2SK3307 |
|---|---|
| Datasheet | 2SK3307 Download |
| Manufacturer |  NEC |
| Description | SWITCHING N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A)● Low Ciss: Ciss = 4650 pF TYP.
● Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3307 TO-3P (TO-3P)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Drain Current (DC) Drain Current (pulse) Note1 ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT1 120 W Total Power Dissipation (TA = 25°C) PT2 3.0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg –55 to +150 °C IAS 45 A EAS 202 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.04 °C/W 41.7 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
