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2SK3304 - N-Channel MOSFET

General Description

The 2SK3304 is N-Channel MOS FET device that

Key Features

  • a Low gate charge and excellent switching characteristics, and designed for high voltage.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3305 N-Channel MOSFET
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. ORDERING INFORMATION PART NUMBER 2SK3304 PACKAGE TO-3P FEATURES • Low gate charge : QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A) • Avalanche capability ratings (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg Note2 Note2 900 ±30 ±7 ±21 130 3.