Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Switching Regulator and DC-DC Converter Applications
Unit: mm
- Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.)
- High forward transfer admittance: |Yfs| = 0.4 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
- Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1...