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2SK3305-ZJ - N-Channel MOSFET

Key Features

  • s.
  • VDS S = 500V.
  • ID = 5 A (VGS = 10V).
  • RDS(ON) ＜ 1.5Ω (VGS = 10V).
  • Gate voltage rating: ±30 V.
  • Avalanche capability ratings Drain (D) Gate (G) Body Diode Source (S).
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 500 V VGS ±30 Continuous Drain Current ID 5 Pulsed Drain Current (Note.1) IDM 20 A Single Avalanche Current (Note.2) IAS 5 Power Dissipation Tc = 25℃ PD 75 W Ta = 2.

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SMD Type N-Channel MOSFET 2SK3305-ZJ MOSFET ■ Features ● VDS S = 500V ● ID = 5 A (VGS = 10V) ● RDS(ON) ＜ 1.5Ω (VGS = 10V) ● Gate voltage rating: ±30 V ● Avalanche capability ratings Drain (D) Gate (G) Body Diode Source (S) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 500 V VGS ±30 Continuous Drain Current ID 5 Pulsed Drain Current (Note.1) IDM 20 A Single Avalanche Current (Note.2) IAS 5 Power Dissipation Tc = 25℃ PD 75 W Ta = 25℃ 1.5 Single Avalanche Energy (Note.2) EAS 125 mJ Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10 us, Duty Cycle ≤ 1 % Note.2: Starting TJ = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V www.kexin.com.