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AQV214EH - PhotoMOS RELAY

This page provides the datasheet information for the AQV214EH, a member of the AQV210EH PhotoMOS RELAY family.

Datasheet Summary

Features

  • 1. Reinforced insulation of I/O isolation voltage 5,000V (Reinforced insulation type) 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. Stable on-resistance 4. Low-level off state leakage current of max. 1 μA.

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Datasheet preview – AQV214EH

Datasheet Details

Part number AQV214EH
Manufacturer Panasonic
File Size 154.76 KB
Description PhotoMOS RELAY
Datasheet download datasheet AQV214EH Datasheet
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Full PDF Text Transcription

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DIP6-pin type, reinforced insulation available GE 1 Form A (AQV21❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 16 25 34 FEATURES 1. Reinforced insulation of I/O isolation voltage 5,000V (Reinforced insulation type) 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. Stable on-resistance 4. Low-level off state leakage current of max. 1 μA TYPICAL APPLICATIONS • High-speed inspection machines • Telephone equipment • Data communication equipment • Computers RoHS compliant TYPES Output rating* I/O isolation Load voltage Load current Package Through hole terminal Tube packing style Part No.
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