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AQV214EH, AQV210EH PhotoMOS RELAY

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Description

DIP6-pin type, reinforced insulation available GE 1 Form A (AQV21❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes s.

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This datasheet PDF includes multiple part numbers: AQV214EH, AQV210EH. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AQV214EH, AQV210EH
Manufacturer
Panasonic
File Size
154.76 KB
Datasheet
AQV210EH-Panasonic.pdf
Description
PhotoMOS RELAY
Note
This datasheet PDF includes multiple part numbers: AQV214EH, AQV210EH.
Please refer to the document for exact specifications by model.

Features

* 1. Reinforced insulation of I/O isolation voltage 5,000V (Reinforced insulation type) 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. Stable on-resistance 4. Low-level off state leak

Applications

* High-speed inspection machines
* Telephone equipment
* Data communication equipment
* Computers RoHS compliant TYPES Output rating
* I/O isolation Load voltage Load current Package Through hole terminal Tube packing style Part No. Surface-mount terminal

AQV214EH Distributors

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