Description
RF PhotoMOS (AQV221N) Lower output capacitance and RF PhotoMOSon resistance.High speed switching.(Turn on time: 0.2ms, Turn off time: 0.08ms).(A.
Features
* 1. Low output capacitance between output terminals and low ONresistance
2. High speed switching (Turn on time: typ. 200μs)
3. High sensitivity Control loads up to 250mA with input current 5mA
4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, whe
Applications
* Measuring and testing equipment 1. Testing equipment for semiconductor
performance IC tester, Liquid crystal driver tester, semiconduc