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AQV221NA, AQV221N RF PhotoMOS RELAY

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Description

RF PhotoMOS (AQV221N) Lower output capacitance and RF PhotoMOSon resistance.High speed switching.(Turn on time: 0.2ms, Turn off time: 0.08ms).(A.

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This datasheet PDF includes multiple part numbers: AQV221NA, AQV221N. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AQV221NA, AQV221N
Manufacturer
Panasonic
File Size
113.69 KB
Datasheet
AQV221N-Panasonic.pdf
Description
RF PhotoMOS RELAY
Note
This datasheet PDF includes multiple part numbers: AQV221NA, AQV221N.
Please refer to the document for exact specifications by model.

Features

* 1. Low output capacitance between output terminals and low ONresistance 2. High speed switching (Turn on time: typ. 200μs) 3. High sensitivity Control loads up to 250mA with input current 5mA 4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, whe

Applications

* Measuring and testing equipment 1. Testing equipment for semiconductor performance IC tester, Liquid crystal driver tester, semiconduc

AQV221NA Distributors

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