* 1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals PhotoMOS feature extremely
AQW216EH Datasheet (162.68 KB)
AQW216EH
Panasonic
162.68 KB
Photo mos relay.
DIP8-pin type with reinforced insulation GE 2 Form A (AQW21❍EH) 9.86 .388 6.4 .252 9.86 .388 3.2 .126 6.4 .252 2.9 .114 (Height includes stand.
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