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DIP8-pin type with reinforced insulation
GE 2 Form A
(AQW21❍EH)
9.86 .388
6.4 .252
9.86 .388
3.2
.126
6.4 .252
2.9 .114
(Height includes standoff)
mm inch
18 27 36 45
RoHS compliant
FEATURES
1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and high speed response Can control max. 0.14 A load current with 5 mA input current. Fast operation speed of Typ. 0.5 ms (AQW210EH). 5. Low-level off state leakage current of max.
AQW210EH Datasheet
