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MA2ZD02 Schottky Barrier Diodes

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Description

Schottky Barrier Diodes (SBD) MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification K A 0.625 I .

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Features

* 0.5 ± 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current
* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125
* 55 to +125 Unit V V mA A °C °C 0.4 ±

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