MA3S132A - Silicon epitaxial planar type Switching Diodes
Switching Diodes MA3S132A Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 1.60 0.03 0.80 0.80 0.51 0.51 1.60 ± 0.1 0.80 0.80 ± 0.05 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current Junction temperature Storage temperature Note) : t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 55 to +150 Unit V V mA mA mA °C °C 0.60
MA3S132A Features
* 1 3 2 0.28 ± 0.05 1 MA3S132A IF V F 103 105 Ta = 150°C 102 104 Switching Diodes IR V R 1.6 1.4 VF Ta Forward current IF (mA) Reverse current IR (nA) Forward voltage VF (V) 1.2 1.0 IF = 100 mA 0.8 0.6 0.4 0.2 10 103 100°C 1 Ta = 150°C 100°C 25°C
* 20°C 102 25°C 10 10
