MA3XD11 Datasheet - Panasonic

MA3XD11 Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± 0.15 2.8 0.3 + 0.2 1.5 0.05 + 0.25 0.65 ± 0.15 2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current 1 Non-repetitive peak forward surge current 2 Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 20 25 1.0 3 125 55 to + 125 V V A A °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3.

MA3XD11 Features

* 1 MA3XD11 IF  V F 10 Ta = 125°C 1 1.0 Schottky Barrier Diodes (SBD) VF  Ta IR  VR Ta = 125°C 10

* 1 10

* 2 Forward voltage VF (V) Forward current IF (A) Reverse current IR (A) 75°C 10

* 1 10

* 2 10

* 3 10

* 4 10

* 5 10

* 6 25°C

* 20

MA3XD11_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

MA3XD11

Manufacturer:

Panasonic

File Size:

41.28 KB

Description:

Silicon epitaxial planar type.

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MA3XD11 MA3XD11 Silicon epitaxial planar type Panasonic

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