MA3XD11 - Silicon epitaxial planar type
Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± 0.15 2.8 0.3 + 0.2 1.5 0.05 + 0.25 0.65 ± 0.15 2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current 1 Non-repetitive peak forward surge current 2 Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 20 25 1.0 3 125 55 to + 125 V V A A °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3
MA3XD11 Features
* 1 MA3XD11 IF V F 10 Ta = 125°C 1 1.0 Schottky Barrier Diodes (SBD) VF Ta IR VR Ta = 125°C 10
* 1 10
* 2 Forward voltage VF (V) Forward current IF (A) Reverse current IR (A) 75°C 10
* 1 10
* 2 10
* 3 10
* 4 10
* 5 10
* 6 25°C
* 20
