* 1 MA3XD11 IF V F 10 Ta = 125°C 1 1.0 Schottky Barrier Diodes (SBD) VF Ta IR VR Ta = 125°C 10
* 1 10
* 2 Forward voltage VF (V) Forward current IF (A) Reverse current IR (A) 75°C 10
* 1 10
* 2 10
* 3 10
* 4 10
* 5 10
* 6 25°C
* 20
MA3XD11
Panasonic
41.28 KB
Silicon epitaxial planar type.
Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.65 ± 0.15
2.8
* 0.3
+ 0.2.
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