MA6X123 Datasheet (Panasonic) - Silicon epitaxial planar type

MA6X123, Silicon epitaxial planar type

Switching Diodes MA6X123 Silicon epitaxial planar type Unit : mm For switching circuit 0.65 ± 0.15 2.8 + 0.2 0.3 + 0.25 1.5 0.05 6 1 0.65 ± 0.15 0.3 0.05 + 0.1 1.1 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current 1 Peak forward current 1 Non-repetitive peak forward surge current 1,2 Junction temperature Storage temperature Note) 1 : Value for single diode 2 : t = 1 s Symbol VR VRM IF IFM IFSM Tj

MA6X123 Features

* 1 MA6X123 IF  VF 103 102 Ta = 150°C 102 10 Switching Diodes IR  V R 1.6 1.4 VF  Ta Forward current IF (mA) Reverse current IR (µA) Forward voltage VF (V) Ta = 150°C 10 100°C 25°C

* 20°C 1 100°C 1 1.2 1.0 0.8 0.6 0.4 3 mA 0.2 IF = 100 mA 10

* 1 25°C 10

* 2 10 mA 10