MIP3J20MS Datasheet, Circuit, Panasonic

✔ MIP3J20MS Application

(such as office equipment, communications equipment, measuring instruments and household appliances), or for

PDF File Details

Panasonic manufacturer logo

Part number:

MIP3J20MS

Manufacturer:

Panasonic

File Size:

559.66kb

Download:

📄 Datasheet

Description:

Silicon mosfet type integrated circuit.

📥 Download PDF (559.66kb)

📁 Related Datasheet

MIP3J2VMSSCF - Silicon MOSFET (Panasonic)
DReovcisNioon. . T2 D4-EA-01851 Product Specification MIP3J2VMSSCF Type Application Structure Equivalent Circuit Package Silicon MOSFET type Integr.

MIP301 - Silicon MOS IC (Panasonic Semiconductor)
Intelligent Power Devices (IPDs) MIP301 Silicon MOS IC s Features q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into.

MIP3530MS - Silicon MOS FET (Panasonic)
MIP3530MS Silicon MOS FET type integrated circuit  Features  Expanding the range of input / output  High-efﬁciency and the reduction of coil sound.

MIP3550MS - Silicon MOS FET (Panasonic)
MIP3550MS Silicon MOS FET type integrated circuit  Features  Expanding the range of input / output  High-efﬁciency and the reduction of coil sound.

MIP3550MTSCF - Silicon MOSFET type Integrated Circuit (Panasonic)
MIP3550MTSCF Type Application Structure Equivalent Circuit Package Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS.

MIP3E30MP - Silicon MOS type integrated circuit (Panasonic)
(IPD) MIP3E30MP MOS ■ • (MIP2ExD • • 50% ) 8 9.4±0.3 Unit : mm +0 0.25 -0.05 .10 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ■ • 1 2 3 4 2.54±0.25 ■ .

MIP3E30MY - Silicon MOSFET (Panasonic)
MIP3E30MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 0.88 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-2.

MIP3E3SMY - Silicon MOS type integrated circuit (Panasonic)
MIP3E3SMY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control Max. duty.

MIP3E40MY - Silicon MOSFET (Panasonic)
MIP3E40MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.5 IDP 2.3 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-22.

MIP3E50MY - Intelligent Power Device (Panasonic)
MIP3E50MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.98 IDP 3.1 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-2.

TAGS

MIP3J20MS Silicon MOSFET type Integrated Circuit Panasonic