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MIP4170MD Silicon MOSFET

MIP4170MD Description

Intelligent Power Devices (IPDs) MIP4170MD Silicon MOS FET type integrated circuit * .

MIP4170MD Features

* Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
* Reduces circuit power consumption by supplying IPD inner circuit current from input terminal of auxiliary winding voltage (VCC)

MIP4170MD Applications

* For artificial resonance power source
* Absolute Maximum Ratings Ta = 25°C±3°C Parameter Symbol Rating Unit DRAIN voltage VD - 0.3 to +700 V VCC voltage VCC - 0.3 to +45 V VDD voltage VDD - 0.3 to +9 V FB voltage VFB - 0.3 to +6 V TR voltage VTR - 0.4 to +10 V Drain pea

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Datasheet Details

Part number
MIP4170MD
Manufacturer
Panasonic
File Size
451.54 KB
Datasheet
MIP4170MD-Panasonic.pdf
Description
Silicon MOSFET

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Silicon MOSFET Panasonic
Panasonic MIP4170MD-like datasheet