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VTT1115 - .050 NPN Phototransistors

Datasheet Summary

Description

A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package.

The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing.

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Datasheet Details

Part number VTT1115
Manufacturer PerkinElmer Optoelectronics
File Size 23.40 KB
Description .050 NPN Phototransistors
Datasheet download datasheet VTT1115 Datasheet
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.050" NPN Phototransistors TO-46 Lensed Package VTT1115, 16, 17 PACKAGE DIMENSIONS inch (mm) CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: 50T PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE11xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 110°C -40°C to 110°C 250 mW 3.
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