MX1011B200Y Datasheet - Philips

Microwave power transistor

MX1011B200Y Features

* Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes

MX1011B200Y General Description

1 collector 2 emitter 3 base connected to ﬂange ηC (%) ≥45 APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to.

MX1011B200Y Datasheet (88.46 KB)

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Datasheet Details

Part number:

MX1011B200Y

Manufacturer:

Philips

File Size:

88.46 KB

Description:

Microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product speciﬁcation Supersedes data of January 1995 1997 Feb 18 Philips .

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MX1011B200Y Microwave power transistor Philips

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MX1011B200Y Features

MX1011B200Y General Description

Datasheet Details

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