* Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes
MX1011B200Y Datasheet (88.46 KB)
MX1011B200Y
Philips
88.46 KB
Microwave power transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
MX1011B200Y Microwave power transistor
Product specification Supersedes data of January 1995
1997 Feb 18
Philips .
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