Part number:
MX1011B200Y
Manufacturer:
Philips
File Size:
88.46 KB
Description:
Microwave power transistor.
Datasheet Details
1 collector 2 emitter 3 base connected to flange ηC (%) ≥45 APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth.
Also suitable for medium pulse, heavy duty operation within the 1030 MHz to
MX1011B200Y Features
* Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes
Datasheet Details
MX1011B200Y
Philips
88.46 KB
Microwave power transistor.
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