MX1011B200Y Datasheet - Philips

MX1011B200Y, Microwave power transistor

DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product speciﬁcation Supersedes data of January 1995 1997 Feb 18 Philips .
1 collector 2 emitter 3 base connected to ﬂange ηC (%) ≥45 APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers fo.

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Datasheet Details

Part number:

MX1011B200Y

Manufacturer:

Philips

File Size:

88.46 KB

Description:

Microwave power transistor

Applications

* up to 100 µs pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very stable characteristics and excellent lifetime

MX1011B200Y Distributors

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