MZ0912B100Y Datasheet - Philips

NPN microwave power transistors

MZ0912B100Y Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry i

MZ0912B100Y General Description

NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mount.

MZ0912B100Y Datasheet (98.88 KB)

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Datasheet Details

Part number:

MZ0912B100Y

Manufacturer:

Philips

File Size:

98.88 KB

Description:

Npn microwave power transistors.
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product speciﬁcation Supersedes data of June 1992 1997 F.

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MZ0912B100Y NPN microwave power transistors Philips

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MZ0912B100Y Features

MZ0912B100Y General Description

Datasheet Details

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