MZ0912B100Y NPN microwave power transistors

Philips

Description

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product speciﬁcation Supersedes data of June 1992 1997 F.
NPN silicon planar epitaxial microwave power transistors.

📥 Download Datasheet

MZ0912B100Y Datasheet Preview — Preview of MZ0912B100Y PDF

Datasheet Specifications

Part number: MZ0912B100Y
Manufacturer: Philips
File Size: 98.88 KB
Datasheet: MZ0912B100Y_PhilipsSemiconductors.pdf
Description: NPN microwave power transistors

Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry i

MZ0912B100Y Distributors

📁 Related Datasheet

📌 All Tags

MZ0912B100Y NPN microwave power transistors Philips

Philips MZ0912B100Y-like datasheet

MZ0912B50Y