MZ0912B100Y Datasheet, Transistors, Philips

MZ0912B100Y Features

• Transistors
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

PDF File Details

Part number:

MZ0912B100Y

Manufacturer:

Philips

File Size:

98.88kb

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📄 Datasheet

Description:

Npn microwave power transistors. NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved out

MZ0912B100Y Application

• Applications
• Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN sili

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MZ0912B100Y

Philips

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