MZ0912B50Y Datasheet - Philips

NPN microwave power transistor

MZ0912B50Y Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry g

MZ0912B50Y General Description

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. handbook, halfpage MZ0912B50Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a com.

MZ0912B50Y Datasheet (90.73 KB)

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Datasheet Details

Part number:

MZ0912B50Y

Manufacturer:

Philips

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90.73 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 1997 Feb 18 Phil.

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MZ0912B50Y NPN microwave power transistor Philips

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MZ0912B50Y Features

MZ0912B50Y General Description

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