MZ0912B50Y NPN microwave power transistor

Philips

Description

DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 1997 Feb 18 Phil.
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange.

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Datasheet Specifications

Part number: MZ0912B50Y
Manufacturer: Philips
File Size: 90.73 KB
Datasheet: MZ0912B50Y_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry g

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