MZ0912B50Y Datasheet, Transistor, Philips

MZ0912B50Y Features

• Transistor
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

PDF File Details

Part number:

MZ0912B50Y

Manufacturer:

Philips

File Size:

90.73kb

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📄 Datasheet

Description:

Npn microwave power transistor. NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It i

MZ0912B50Y Application

• Applications Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epita

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MZ0912B50Y

Philips

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