MZ0912B50Y Datasheet - Philips

MZ0912B50Y NPN microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. handbook, halfpage MZ0912B50Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a com.

MZ0912B50Y Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry g

MZ0912B50Y Datasheet (90.73 KB)