PMBF170 N-channel enhancement mode vertical D-MOS transistor

Philips

Description

DISCRETE SEMICONDUCTORS DATA SHEET PMBF170 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconduct.
N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope.

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Datasheet Specifications

Part number: PMBF170
Manufacturer: Philips
File Size: 56.11 KB
Datasheet: PMBF170_PhilipsSemiconductors.pdf
Description: N-channel enhancement mode vertical D-MOS transistor

Features

* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 200 mA; VGS = 10 V T

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PMBF170 N-channel enhancement mode vertical D-MOS transistor Philips

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