* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 200 mA; VGS = 10 V T
PMBF170
Philips
56.11 KB
N-channel enhancement mode vertical d-mos transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF170 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconduct.
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