* Low noise
* Interchangeability of drain and source connections
* High gain. handbook, halfpage PMBF4416; PMBF4416A 3 d s DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifier
PMBF4416A Datasheet (95.16 KB)
PMBF4416A
Philips
95.16 KB
N-channel field-effect transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF4416; PMBF4416A N-channel field-effect transistor
Product speciļ¬cation File under Discrete Semiconductors, SC.
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