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LAE4001R NPN microwave power transistor

LAE4001R Description

DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product speciļ¬cation Supersedes data of June 1992 File under Discrete Sem.
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid.

LAE4001R Features

* Self-aligned process entirely ion implanted and gold sandwich metallization
* Optimum temperature profile

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NPN microwave power transistor Philipss
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