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LAE4001R

NPN microwave power transistor

LAE4001R Datasheet (48.46 KB)

Preview of LAE4001R PDF Datasheet

Datasheet Details

Part number:

LAE4001R

Manufacturer:

Philipss

File Size:

48.46 KB

Description:

Npn microwave power transistor

LAE4001R Features

* Self-aligned process entirely ion implanted and gold sandwich metallization

* Optimum temperature profile

* Excellent performance and reliability. APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz. DESCRIPTION NPN silicon planar epitaxial microwave pow

LAE4001R General Description

NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits. 2 4 handbook, halfpage LAE4001R PINNING - SOT100 PIN 1 2 3 4 collect.

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LAE4001R NPN microwave power transistor Philipss

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