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LAE4002S NPN microwave power transistor

LAE4002S Description

DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product speciļ¬cation Supersedes data of June 1992 File under Discrete Sem.
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid.

LAE4002S Features

* Diffused emitter ballasting resistors
* Self-aligned process entirely ion implanted and gold sandwich metallization
* Optimum temperature profile

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