LAE4002S NPN microwave power transistor

Philipss

Description

DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 File under Discrete Sem.
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid.

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Datasheet Specifications

Part number: LAE4002S
Manufacturer: Philipss
File Size: 48.52 KB
Datasheet: LAE4002S_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Features

* Diffused emitter ballasting resistors
* Self-aligned process entirely ion implanted and gold sandwich metallization
* Optimum temperature profile

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LAE4002S NPN microwave power transistor Philipss

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