LAE4002S Datasheet - Philipss

NPN microwave power transistor

LAE4002S Features

* Diffused emitter ballasting resistors

* Self-aligned process entirely ion implanted and gold sandwich metallization

* Optimum temperature profile

* Excellent performance and reliability. APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz. DESCRI

LAE4002S General Description

NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits. 1 Marking code: R9. handbook, halfpage LAE4002S PINNING - SOT100 PIN.

LAE4002S Datasheet (48.52 KB)

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Part number:

LAE4002S

Manufacturer:

Philipss

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48.52 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 File under Discrete Sem.

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LAE4002S NPN microwave power transistor Philipss

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LAE4002S Features

LAE4002S General Description

Datasheet Details

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