Part number:
L2821
Manufacturer:
Polyfet RF Devices
File Size:
42.18 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Renesas Electronics Corporation | ISL28217FBZ-T7A | IC OPAMP GP 2 CIRCUIT 8SOIC | DigiKey | 1 | 1 units |
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L2821
Polyfet RF Devices
42.18 KB
Silicon gate enhancement mode rf power ldmos transistor
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 8.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
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