Part number:
L2801
Manufacturer:
Polyfet RF Devices
File Size:
42.16 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2
L2801
Polyfet RF Devices
42.16 KB
Silicon gate enhancement mode rf power ldmos transistor.
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