L2801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices

Description

polyfet rf devices L2801 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Specifications

Part number: L2801
Manufacturer: Polyfet RF Devices
File Size: 42.16 KB
Datasheet: L2801_PolyfetRFDevices.pdf
Description: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

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L2801 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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