LP802 Datasheet - Polyfet RF Devices

LP802, SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

polyfet rf devices LP802 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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LP802_PolyfetRFDevices.pdf

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Datasheet Details

Part number:

LP802

Manufacturer:

Polyfet RF Devices

File Size:

35.75 KB

Description:

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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