Part number:
LP821
Manufacturer:
Polyfet RF Devices
File Size:
35.69 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 10.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
LP821
Polyfet RF Devices
35.69 KB
Silicon gate enhancement mode rf power ldmos transistor.
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