LQ801 Datasheet, Transistor, Polyfet RF Devices

LQ801 Features

• Transistor low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Wa

PDF File Details

Part number:

LQ801

Manufacturer:

Polyfet RF Devices

File Size:

35.38kb

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📄 Datasheet

Description:

Silicon gate enhancement mode rf power ldmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Pa

LQ801 Application

• Applications Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pro

TAGS

LQ801

Polyfet RF Devices

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