Part number:
LQ801
Manufacturer:
Polyfet RF Devices
File Size:
35.38 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
LQ801
Polyfet RF Devices
35.38 KB
Silicon gate enhancement mode rf power ldmos transistor.
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