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LQ801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LQ801 Description

polyfet rf devices LQ801 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LQ801 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
LQ801
Manufacturer
Polyfet RF Devices
File Size
35.38 KB
Datasheet
LQ801_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
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