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LQ821

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LQ821 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

LQ821 Datasheet (35.85 KB)

Preview of LQ821 PDF

Datasheet Details

Part number:

LQ821

Manufacturer:

Polyfet RF Devices

File Size:

35.85 KB

Description:

Silicon gate enhancement mode rf power ldmos transistor.

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LQ821 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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