LQ821 Datasheet - Polyfet RF Devices

datasheet Preview Page 1 from Datasheet4u.com

LQ821 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

polyfet rf devices LQ821 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LQ821_PolyfetRFDevices.pdf

LQ821 Datasheet Preview — Preview of LQ821 PDF

Datasheet Details

Part number:

LQ821

Manufacturer:

Polyfet RF Devices

File Size:

35.85 KB

Description:

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

LQ821 Distributors

📁 Related Datasheet

LQ80-103V LQ80-103Y LQ80-104V LQ80-104Y LQ80-203V LQ80-203Y

📌 All Tags

LQ821 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

Polyfet RF Devices LQ821-like datasheet

LQ801