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SM706 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SM706 Description

polyfet rf devices SM706 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SM706 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 135.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

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Datasheet Details

Part number
SM706
Manufacturer
Polyfet RF Devices
File Size
37.31 KB
Datasheet
SM706_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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