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SM706

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SM706 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 135.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

SM706 Datasheet (37.31 KB)

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Datasheet Details

Part number:

SM706

Manufacturer:

Polyfet RF Devices

File Size:

37.31 KB

Description:

Silicon gate enhancement mode rf power vdmos transistor.

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SM706 SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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