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SP202 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SP202 Description

polyfet rf devices SP202 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SP202 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
SP202
Manufacturer
Polyfet RF Devices
File Size
36.35 KB
Datasheet
SP202_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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