SP202
Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 30 Watts Junction to Case Thermal Resistance o 7.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
1.8 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER mon Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 45 TYP
8.0 WATTS OUTPUT )
MAX UNITS d B % 20:1 TEST CONDITIONS Idq =...
