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SP203 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

  • low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

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Datasheet Details

Part number SP203
Manufacturer Polyfet RF Devices
File Size 34.58 KB
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet download datasheet SP203 Datasheet

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polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 12.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 40 Watts Junction to Case Thermal Resistance o 5.