PDC3912Z Key Features
- 30V,25A, RDS(ON) =18mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- Part: PDC3912Z
- Manufacturer: Potens semiconductor
- Size: 466.58 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDC3910Z | N-Channel MOSFET |
| PDC3901X | P-Channel MOSFETs |
| PDC3902X | N-Channel MOSFET |
| PDC3903X | P-Channel MOSFETs |
| PDC3903Z | P-Channel MOSFET |
PDC3912Z Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.