PDD0903-1 Datasheet (Potens semiconductor)

PDD0903-1, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDD0903-1 Features

* -100V,-18A, RDS(ON) 95mΩ@VGS = -10V

* Improved dv/dt capability

* Fast switching

* 100% PB free and Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM PD TST