Datasheet4U Logo Datasheet4U.com

PDD0906

N-Channel MOSFETs

PDD0906 Features

* 100V,15A, RDS(ON) =90mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD

PDD0906 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD0906 Datasheet (421.84 KB)

Preview of PDD0906 PDF

Datasheet Details

Part number:

PDD0906

Manufacturer:

Potens semiconductor

File Size:

421.84 KB

Description:

N-channel mosfets.

📁 Related Datasheet

PDD0903 P-Channel MOSFETs (Potens semiconductor)

PDD0903-1 P-Channel MOSFETs (Potens semiconductor)

PDD0904 N-Channel MOSFETs (Potens semiconductor)

PDD0905 P-Channel MOSFETs (Potens semiconductor)

PDD0910 N-Channel MOSFETs (Potens semiconductor)

PDD0956 N-Channel MOSFETs (Potens semiconductor)

PDD0956-1 N-Channel MOSFETs (Potens semiconductor)

PDD0958A N-Channel MOSFETs (Potens semiconductor)

PDD0959 P-Channel MOSFETs (Potens semiconductor)

PDD0960 N-Channel MOSFETs (Potens semiconductor)

TAGS

PDD0906 N-Channel MOSFETs Potens semiconductor

Image Gallery

PDD0906 Datasheet Preview Page 2 PDD0906 Datasheet Preview Page 3

PDD0906 Distributor